, Senior Director, Technology Development,
Evgeni Gousev received his M.S. degree in applied physics/molecular physics and his Ph.D. degree in solid-state physics from Moscow Engineering Physics Institute-Technical University in 1988 and 1991, respectively. In 1993, he joined the Laboratory for Surface Modifications, Rutgers University, NJ, first as a Postdoctoral Fellow, then as a Research Assistant Professor, where he performed research on fundamental aspects of gate dielectrics. In 1997, he was a Visiting Professor with the Center for Nanodevices and Systems, Hiroshima University, Japan. Shortly after that, he joined IBM, where he was responsible for several projects in the field of advanced silicon technologies at both Semiconductor Research and Development Center in East Fishkill, NY, and T.J. Watson Research Center in Yorktown Heights, NY. Since July 2005, he has been with the MEMS Research and Innovation Center, Qualcomm MEMS Technologies, San Jose, CA, where he is currently a Senior Director in charge of Technology R&D. He has co-edited 17 books and published more than 150 papers. He is a holder of more than 40 issued and filed patents. Gousev is a member of several professional committees, panels, and societies.